RF plasma synthesis of amorphous AIN powder and films

Amorphous powder and thin films of aluminum nitride (AIN) are deposited in a parallel‐plate RF plasma reactor starting from trimethylaluminum (TMA) and ammonia. Film deposition is favored at lower pressures and NH 3 /TMA ratios; particle deposition occurs under higher pressures and NH 3 /TMA ratios. Electron microscopy, x‐ray diffraction, IR spectroscopy, and UV reflectance measurements are used for product characterization. Films of AIN grown at 250°C are transparent, pure, and have high UV reflectivity. AIN powder is amorphous and has a particle size of 10–20 nm and surface area of about 85 m 2 /g. Amine impurities present in the as‐deposited powder are removed by heat treatment at 600°C. The IR spectra of as‐deposited powders do not show the characteristic Al‐O bonding peak found in powders deposited by other methods.