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July 1, 1981Applied Physics Letters

Growth kinetics of oxidation-induced stacking faults in silicon: A new concept

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Authors

TTT. Y. TanDuke University
U. Gösele
U. GöseleUniversity of Stuttgart

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Tan et al. (1981) studied this question.

synapsesocial.com/papers/6a86de5fbb0787ff27ca0c64https://doi.org/10.1063/1.92526
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