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January 1, 1979Journal of Applied Physics

The effect of oxidation on the diffusion of phosphorus in silicon

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Authors

RFR. W. FrancisCardiff UniversityPDP. S. DobsonStellenbosch University

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Francis et al. (1979) studied this question.

synapsesocial.com/papers/6a86de5fbb0787ff27ca0c66https://doi.org/10.1063/1.325656
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1A Spreading Resistance Technique for Resistivity Measurements on Silicon1966 · 250 citations
  2. 2Experimental-Condition Dependence of Phosphorus Diffusivity in Silicon1970 · 24 citations
  3. 3The Oxidation of Silicon in Dry Oxygen, Wet Oxygen, and Steam1963 · 122 citations
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  5. 5Intrinsic Diffusion of Boron and Phosphorus in Silicon Free From Surface Effects1971 · 66 citations