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Stimulated emission and laser action have been observed near 3.45 eV in single-crystal needles of GaN. These observations support the earlier suggestion that GaN is a direct band-gap semiconductor with Eg∼3.50 eV at 2°K. Furthermore, the occurrence of very high gain (g∼105 cm−1) in the stimulated emission emphasizes the possible device potential of this material.
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Dingle et al. (1971) studied this question.
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