Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
February 28, 2007IEEE Journal of Quantum Electronics

Theory of Optical Gain of {Ge--} {Si}ₗ {Ge}ₘ {Sn}₁-ₗ-ₘ Quantum-Well Lasers

View Full Paper
Ask AI
Bookmark
Share

Authors

SCShu‐Wei ChangNational Yang Ming Chiao Tung UniversitySCShun Lien ChuangUniversity of Illinois Urbana-Champaign

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Chang et al. (2007) studied this question.

synapsesocial.com/papers/6a86ef3536c36f97809ec4a9https://doi.org/10.1109/jqe.2006.890401
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Type-I Ge∕Ge1−x−ySixSny strained-layer heterostructures with a direct Ge bandgap2004 · 167 citations
  2. 2Simple analytic model for heterojunction band offsets1988 · 105 citations
  3. 3Theoretical calculations of heterojunction discontinuities in the Si/Ge system1986 · 1,385 citations
  4. 4Predicted band gap of the new semiconductor SiGeSn1991 · 161 citations
  5. 5Optical gain measurements based on fundamental properties and comparison with many-body theory1999 · 14 citations