Using the Hall effect to measure interface trap densities in silicon carbide and silicon metal-oxide-semiconductor devices

A technique is presented for measuring the density of interface traps versus energy DIT(E) using the Hall effect in metal-oxide-semiconductor samples. Good agreement is obtained between this Hall approach and standard C–V techniques in both SiC and silicon test devices. DIT(E) is found to be much higher in 4H–SiC compared to 6H devices oxidized at the same time. DIT(E) in both SiC poly types increases exponentially with energy approaching the conduction bandedge.