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The dynamical Stark effect of excitons in semiconductors is treated in three and two dimensions (bulk material and MQW structures, respectively). Within the low‐field limit, theoretical results are presented for the gap function, the excitonic enhancement of the Stark shift, and the induced density. Higher bound states and the excitonic continuum are fully taken into account using the Coulomb Green's function.
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Ralf Zimmermann (1988) studied this question.
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