Improved Simulation of Ion Track Structures Using New Geant4 Models—Impact on the Modeling of Advanced Technologies Response

New “MuElec” models and processes are developed and implemented in Geant4 for the generation of low energy electrons in silicon by incident electrons, protons and heavy ions. They allow a more accurate modeling of proton and ion tracks; differences are clearly seen as compared to the tracks previously obtained with the already available Geant4 low energy ionization models, mainly located in the first 10 nm of the track core. The effect of these new tracks on the response of electronic devices is studied by means of TCAD simulations. Significant differences in collected charge-up to 25%-are observed for FinFET structures with one dimension smaller than 10 nm.