Superior electrical properties of crystalline Er2O3 films epitaxially grown on Si substrates

Crystalline Er2O3 thin films were epitaxially grown on Si (001) substrates. The dielectric constant of the film with an equivalent oxide thickness of 2.0nm is 14.4. The leakage current density as small as 1.6×10−4A∕cm2 at a reversed bias voltage of −1V has been measured. Atomically sharp Er2O3∕Si interface, superior electrical properties, and good time stability of the Er2O3 thin film indicate that crystalline Er2O3 thin film can be an ideal candidate of future electronic devices.