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TaN gate electrodes for HfO 2 gate dielectric were prepared using dc magnetron sputtering and compared with Pt gate electrode in terms of thermal stability at a post metal annealing (PMA) temperature of 900°C for 1 min in N 2 . The increase of nitrogen content in Ta 1 − x N x electrode produces an increase of resistivity and Ta 0.463 N 0.537 electrodes showed a good thermal stability of resistivity even at an annealing temperature of 1000°C for 1 min in N 2 ambient. TaN / HfO 2 / Si capacitors showed superior properties to Pt / HfO 2 / Si capacitors in capacitance-voltage and current-voltage characteristics. TaN gate electrodes are suitable for application to high-κ hafnium oxide gate dielectrics.
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Choi et al. (2004) studied this question.
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