Resistance changes associated with precipitation in Al–Cu thin films were monitored during power annealing at current densities up to 4×106 A/cm2 and temperatures of ∼178 and 200 °C. The rate of change of resistance decreased as the current increased. It is argued that this decrease is due to the current inhibiting the precipitation of θ Al2Cu.
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Shine et al. (1972) studied this question.
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