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Effects of spatial dependence of recombination centers on the I-V characteristics of p-n junctions are calculated. The results obtained show that these effects may explain the experimental deviations from the Shockley p-n junction theory and from the theory of the carrier generation-recombination in the space-charge region. The most important result for applications is the junction in which the lifetime increases in the direction of the carrier diffusion; in this case for diffusion current, at reverse bias, a negative resistance appears.
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Voicu Dolocan (1969) studied this question.
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