Drift mobility measurements in semiconductors using small steady dc fields are described. It is necessary in such cases to take diffusion as well as drift into account in calculating the mobility from the transit time, and a calculation is made which considers both effects. If the diffusion corrections are made, one may eliminate the pulsed sweep fields which are customarily used in these experiments. Measurements of transit time vs sweep field show that the diffusion corrections are in agreement with experiment.
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J. P. McKelvey (1956) studied this question.
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