Ballistic electron emission spectroscopy is used to investigate current attenuations in thin films of Pd/Si, from which the elastic and inelastic mean free paths are uniquely determined. The observed equality of transmission across Pd/Si(100) and Si(111) interfaces is attributed to interface scattering, on the basis of which a current transport model is developed that gives unprecedented agreement with experiment over a wide energy range.
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Ludeke et al. (1993) studied this question.
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