Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
August 14, 2006Applied Physics Letters

High bandwidth Ge p-i-n photodetector integrated on Si

View Full Paper
Ask AI
Bookmark
Share

Authors

MOMichael OehmeUniversity of StuttgartJWJ.H. WernerUniversity of StuttgartEKE. KasperStuttgart Technical University of Applied Sciences

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Oehme et al. (2006) studied this question.

synapsesocial.com/papers/6a879a07e6e02bcb4e7d637ehttps://doi.org/10.1063/1.2337003
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1New infrared detector on a silicon chip1984 · 185 citations
  2. 2High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers1998 · 166 citations
  3. 3ABRUPT BORON PROFILES BY SILICON-MBE2002 · 8 citations
  4. 4Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth2005 · 235 citations
  5. 5High-Speed Germanium-on-SOI Lateral PIN Photodiodes2004 · 156 citations