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December 28, 1992Applied Physics Letters

144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substrates

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Authors

JDJ.J. DudleyHewlett-Packard (United States)MIMasayuki IshikawaChiba UniversityDBD.I. BabicUniversity of Zagreb

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Dudley et al. (1992) studied this question.

synapsesocial.com/papers/6a879be076ee853b52c48df7https://doi.org/10.1063/1.107972
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Also Consider

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  4. 4Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers1991 · 49 citations
  5. 5Room-temperature continuous-wave vertical-cavity single-quantum-well microlaser diodes1989 · 185 citations