+55°C pulse lasing at 1.56 µm of all-monolithicInGaAlAs/InP vertical cavity lasers

Using an InP lattice matched InGaAlAs/InAlAs system, an all-monolithic vertical laser structure has been grown. Pulsed lasing at 1.56 µm has been obtained up to +55°C with 45 µm diameter proton-implanted diodes. A thermal resistance of ~420 K/W has been estimated. The reported characterisations indicate the potential of this system laser for CW operation and for simple large-scale processing.