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The incorporation properties segregation, activation, and desorption in Si molecular beam epitaxy of phosphorus (P) are investigated experimentally in comparison to antimony (Sb) over a temperature range from 300 to 900 °C with Secondary Ion Mass Spectroscopy and electrochemical Capacitance/Voltage measurements. P exhibits superior properties over the full temperature range.
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Nützel et al. (1995) studied this question.
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