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November 1, 1991IEEE Photonics Technology Letters

Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers

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Authors

HWHiroshi WadaJichi Medical UniversityDBD.I. BabicUniversity of ZagrebDCD. L. CrawfordAT&T (United States)

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Wada et al. (1991) studied this question.

synapsesocial.com/papers/6a879c98ff36323c8a3b2cd8https://doi.org/10.1109/68.97832
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

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  2. 2Room-temperature continuous wave lasing characteristics of a GaAs vertical cavity surface-emitting laser1989 · 268 citations
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  4. 4InGaAsP(1.3 μm)/InP vertical-cavity surface-emitting laser grown by metalorganic vapor phase epitaxy1990 · 21 citations
  5. 5Sputter deposition of precision Si/Si3N4 Bragg reflectors using multitasking interactive processing control1991 · 4 citations