Semi-insulating GaAs single crystals, with and without In additions, were deformed by constant strain rate compression. The stress was applied along ⟨100⟩ between 500 °C and 800 °C in air, argon and B 2 O 3 liquid encapsulation. Results show that a ) the environment has a considerable influence on the strength of undoped GaAs, b ) indium addition makes GaAs harder and insensitive to environment.
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Djemel et al. (1986) studied this question.
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