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Characteristics in the motion of dislocations generated from scratches in GaAs doped with In at a concentration of 2×1020 atoms/cm3 are investigated and are compared with those in undoped GaAs. α dislocations in In-doped GaAs are found to be immovable under stress lower than 10 MPa in the temperature range 350–750 °C. Such immovability under low stress is not found for β dislocations in In-doped GaAs and for both α and β dislocations in undoped GaAs.
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Yonenaga et al. (1986) studied this question.
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