The velocities of two types of 60° dislocations (α and β dislocations) in undoped n -type InAs and undoped p -type GaSb have been measured by the double-etch technique. In both crystals, α dislocations are more than 10 times as fast as β dislocations. The results, combined with previous results on InSb and GaAs, show that the dislocation velocities in III–V compound semiconductors decrese with increasing energy band gap.
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Choi et al. (1978) studied this question.