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An analytical model for two-dimensional electron gas (2-DEG) for a pseudomorphic AlzGa1−zAs/InyGa1−yAs modulation-doped field-effect transistor is developed. The 2-DEG density is calculated as a function of device dimensions and doping density. A simple analytical expression is established for the charge control. A high transconductance of 270 mS/mm is obtained, which is important in realizing the device for millimeter microwave applications. The results so obtained are compared with experimental data, and show excellent agreement.
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Agrawal et al. (1999) studied this question.
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