Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 21, 1988Electronics Letters

Vertical cavity surface-emitting laser with an AlGaAs/AlAs Bragg reflector

View Full Paper
Ask AI
Bookmark
Share

Authors

TSTakahiro SakaguchiTokyo Institute of TechnologyFKFumio KoyamaTokyo Institute of TechnologyKIKenichi IgaTokyo Institute of Technology

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Sakaguchi et al. (1988) studied this question.

synapsesocial.com/papers/6a879cd76d527d543b2c266ahttps://doi.org/10.1049/el:19880632
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Distributed-feedback, surface-emitting laser diode with lateral double heterostructure1987 · 7 citations
  2. 2Microcavity GalaAs/GaAs surface-emitting laser with I th = 6 mA1987 · 80 citations
  3. 3Surface-emitting laser diode with vertical GaAs/GaAlAs quarter-wavelength multilayers and lateral buried heterostructure1987 · 56 citations
  4. 4Coherent Light Emission From GaAs Junctions1962 · 1,016 citations
  5. 5Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ m1976 · 275 citations