A theoretical study of the tunnelling processes in broken-gap heterostructures is described. The analytical expressions for tunnelling probabilities T were obtained using the two-band approximation of the effective-mass method for single- and double-barrier structures made from InAs, Al x Ga 1-x Sb and GaSb. It is shown that the effects of transformation of quasiparticles determine the properties of such heterostructures.
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Ryzhii et al. (1992) studied this question.
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