We have demonstrated a selective etch process of removing a GaAs substrate for the fabrication of ZnSe-based surface emitting lasers using the PA etchant ( NH 3 OH:H 2 O 2 :H 2 O= x :33:10) and employing a spray method. The etch rate of a GaAs substrate was 3.7 µm/min with a preferential etch rate ratio of over 20 against ZnSe layers. The surface of the ZnSSe layer after removal of a substrate was smooth enough to fabricate ZnSe-based surface emitting lasers.
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Honda et al. (1994) studied this question.
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