Shallow p+ layer in In0.53Ga0.47As using P/Be and As/Be co-implant

Be is implanted into an n-InGaAs epitaxial layer. Both electrical and atomic profiles indicate that Be in-diffusion occurs during annealing, resulting in a p layer thicker than that desired. A co-implant of P or As with Be significantly reduces this Be in-diffusion resulting in shallow (2000 Å) p+-n junctions with 4×1018 cm−3 surface hole concentration and 70% electrical efficiency.