Ion implantation doping of Be acceptors in n-In0.53Ga0.47As is reported. A significant improvement in peak concentration, depth control, and solubility is achieved with rapid (30 s) thermal anneals compared to conventional 15-min furnace anneals, resulting in p-n junction depths less than 1 μm with peak acceptor concentrations greater than 1018 cm−3. Electrical profiles and p-n junction characteristics are presented.
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Tell et al. (1984) studied this question.
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