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Negative electron affinity (NEA) GaAs photocathodes were vapor grown on GaP/InxGa1−xP substrates with 0.4<x<0.65. The dependence of cathode sensitivity, electron diffusion length, cathode back-interface recombination velocity, and surface-escape probability on buffer-layer composition was determined. The optimal InxGa1−xP composition for these samples was in the range of 52–55% InP. Indium unintentionally introduced into the GaAs causes a shift in the InxGa1−xP composition for good lattice match. SIMS and AES measurements were made to obtain the chemical and electronic structure of the epitaxial layers. The photosensitivity dependence on both Zn doping concentration and cathode thickness are presented. The highest transmission mode photosensitivity measured was 740 μA/lm.
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Fisher et al. (1979) studied this question.
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