Low-temperature breakdown characteristics in n-Ge

The low-temperature breakdown characteristics of n-Ge are investigated theoretically using various models for the recombination process of the non-equilibrium carriers. The energy distribution of the carriers at the onset of the breakdown is assumed to be Maxwellian and effective electron temperature is used. The calculations are carried out for a parabolic law of dispersion and a scalar effective mass. The theoretical results for some of the models of the recombination process are found to be in good agreement with the available experimental data.