Efficiency of radiation defect formation in silicon at various intensities of electron and γ-ray irradiation

The effect of 60Co γ-ray and ≦ 10 MeV electron irradiation intensity on the formation efficiency of the main compensating and recombination radiation defects in n- and p-Si (ϱ = 10 to 1000 ω cm) grown by the Czochralski and vacuum floating-zone techniques is studied. The results are obtained from the analysis of the temperature dependences of the Hall coefficient, electrical conductivity, and charge carrier lifetime. The same character of accumulation process of interstitial and vacancy-type radiation defects while changing electron or y-irradiation intensity is established. Concentrations of stable radiation defects produced as function of irradiation intensities observed in the experiment are explained taking into account the variation in the Brenkel pair annihilation rate on increasing particle flux density. The dominant role of primary processes during complex formation in silicon is inferred. It is assumed that in p-Si the efficiency of these processes is somewhat “masked” by secondary processes. Possible models of radiation defect formation in silicon and their applicability for the explanation of the results obtained are discussed.