Width‐Dependent Sheet Resistance of Nanometer‐Wide Si Fins as Measured with Micro Four‐Point Probe

This paper extends the applicability of the micro four‐point probe technique from the sheet resistance measurements on large areas toward narrow (<20 nm) semiconducting nanostructures with an elongated fin geometry. Using this technology, it is shown that the sheet resistance of boron‐implanted and laser‐annealed silicon fins with widths ranging from 500 down to 20 nm rises as the width is reduced. Drift‐diffusion simulations show that the observed increase can be partially explained by the carrier depletion induced by interface states at the fin sidewalls.