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August 1, 1971Journal of Applied Physics

Annealing of Electron-Irradiated n-Type Silicon: Illumination and Fluence Dependence

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Authors

LKLionel C. KimerlingMassachusetts Institute of TechnologyCCC. P. CarnesUnited States Air Force Research Laboratory

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Kimerling et al. (1971) studied this question.

synapsesocial.com/papers/6a87c68cf8efd6d7e4fb1215https://doi.org/10.1063/1.1660768
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Also Consider

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  1. 1Annealing of Electron-Irradiated n -Type Silicon. I. Donor Concentration Dependence1971 · 68 citations
  2. 2Low-Temperature Annealing Studies in Ge1959 · 87 citations
  3. 3Spin Resonance in Electron Irradiated Silicon1959 · 215 citations
  4. 4Gamma Irradiation of Silicon. II. Levels in n-Type Float-Zone Material1963 · 61 citations
  5. 5Recombination Centers in Gamma-Irradiated Silicon1966 · 29 citations