Hall Effect Measurement of Radiation Effect on P-Type Silicon

The Ev+0.27 ev center was produced by γ-ray irradiation at room temperature in P type silicon single crystals. The introduction rate was found to be proportional to the density of the acceptor as dopant. It suggests that this center might be dopant-vacancy complex as in the case of E center in N type materials. It was revealed out that this radiation-induced level is closely related to the dislocation density in both formation and annealing behaviors. At the same time, oxygen concentration reduces the introduction rate of the Ev+0.27 eV center and influences its annealing behaviors, which is similar to the case of E center.