Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
December 15, 2004Applied Physics Letters

In situ measurements of the critical thickness for strain relaxation in AlGaN∕GaN heterostructures

View Full Paper
Ask AI
Bookmark
Share

Authors

SLS. R. LeeSandia National LaboratoriesDKDaniel KoleskeUnited States Naval Research LaboratoryKCKaren Charlene CrossSandia National Laboratories

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Lee et al. (2004) studied this question.

synapsesocial.com/papers/6a87f110cb36de311aaa6156https://doi.org/10.1063/1.1840111
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Critical thickness of GaN thin films on sapphire (0001)1996 · 108 citations
  2. 2Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy1990 · 102 citations
  3. 3Stress evolution during metalorganic chemical vapor deposition of GaN1999 · 247 citations
  4. 4A virtual interface method for extracting growth rates and high temperature optical constants from thin semiconductor films using <i>in</i> <i>situ</i> normal incidence reflectance1995 · 152 citations