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August 29, 1994Applied Physics Letters

Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

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Authors

MKM. Asif KhanGovernment of the United States of AmericaJKJ. N. KuzniaOmega Optics (United States)DOD. T. OlsonET Enterprises (United Kingdom)

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Khan et al. (1994) studied this question.

synapsesocial.com/papers/6a87f144aaaef52b1e4de6c8https://doi.org/10.1063/1.112116
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