InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance

High-performance InGaN-channel high-electron-mobility transistors (HEMTs) are fabricated and investigated in detail. The transconductance exhibits a high stability over a wide range of gate voltages, indicating excellent operation linearity. The relative saturation output current densities are 81 and 68% when the temperature increases to 400 and 500 K, respectively, with respect to the value of 1128.2 mA/mm at 300 K. In addition, the breakdown voltage reaches 187 V at 300 K, which is comparable to that of a GaN-channel HEMT. The presented results demonstrate the large potentials of the InGaN-channel HEMT in high-frequency power applications.