Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 9, 2022MicromachinesOpen Access

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

View Full Paper
Ask AI
Bookmark
Share

Authors

YQYingshuo QinXidian UniversityCCChangchun ChaiXidian UniversityFLFu-Xing LiYunnan University

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Qin et al. (2022) studied this question.

synapsesocial.com/papers/6a87f1d96304c7fd8e4de6f6https://doi.org/10.3390/mi13010106
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide–semiconductor structures1997 · 138 citations
  2. 2AlGaN/GaN HFET reliability2009 · 161 citations
  3. 3High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique2015 · 62 citations
  4. 4Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface1990 · 180 citations
  5. 5Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures1999 · 3,018 citations