Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
May 18, 1992Applied Physics Letters

Growth of GaN(0001)1×1 on Al2O3(0001) by gas-source molecular beam epitaxy

View Full Paper
Ask AI
Bookmark
Share

Authors

RPR. C. PowellUniversity of Illinois Urbana-ChampaignNLN.-E. LeeUniversity of Illinois Urbana-ChampaignJGJ. E. GreeneLinköping University

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Powell et al. (1992) studied this question.

synapsesocial.com/papers/6a87f20f729e8aa7bb58272fhttps://doi.org/10.1063/1.106948
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapor-phase epitaxy1987 · 179 citations
  2. 2GaN Growth Using GaN Buffer Layer1991 · 1,326 citations
  3. 3Growth of single-crystal metal superlattices in chosen orientations1982 · 150 citations
  4. 4A new technique for crystallographic characterization of heteroepitaxial crystal films1988 · 58 citations
  5. 5Novel metalorganic chemical vapor deposition system for GaN growth1991 · 371 citations