A review of electronic transport in semiconductors in the near ballistic regime is presented. Recent experiments and theories are discussed in detail. It is shown that the basic physics of ballistic transport is qualitatively well understood. Quantitatively much work remains to be done, especially with respect to device applications. Some problems related to applications are discussed in context with hot-electron- and high-electron-mobility-transistors.>
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Hess et al. (1988) studied this question.
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