Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 1, 1983IEEE Transactions on Electron Devices

Transconductance degradation in thin-Oxide MOSFET's

View Full Paper
Ask AI
Bookmark
Share

Authors

GBG. BaccaraniUniversity of BolognaMWM.R. WordemanIBM (United States)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Baccarani et al. (1983) studied this question.

synapsesocial.com/papers/6a87f6a2d03e68c3c9a5302dhttps://doi.org/10.1109/t-ed.1983.21290
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1MOS Device and technology constraints in VLSI1982 · 77 citations
  2. 2Static characteristics of extremely thin gate oxide m.o.s. transistors1975 · 7 citations
  3. 3Calculation of the Space Charge, Electric Field, and Free Carrier Concentration at the Surface of a Semiconductor1955 · 374 citations
  4. 4Design of micron MOS switching devices1972 · 115 citations
  5. 5The Si-SiO 2 Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique1967 · 1,859 citations