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February 20, 1995Applied Physics Letters

Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor deposition

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TST. J. SchmidtOklahoma State UniversityXYXing YangHunan UniversitySHSung‐Ho HwangKangwon National University

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Schmidt et al. (1995) studied this question.

synapsesocial.com/papers/6a87fd5b729e8aa7bb582bcfhttps://doi.org/10.1063/1.113820
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