Heteroepitaxial growth of CdTe on an InSb (111)B substrate has been investigated using the metalorganic chemical vapor deposition method under a total vapor pressure of about 1 Pa. By cracking diethyltellurium thermally at 670 °C, CdTe films were deposited in a wide substrate temperature range from 120 to 450 °C. Single-crystal films grown at 250 °C showed a good surface morphology.
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Sugiura et al. (1987) studied this question.
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