⌘+K

Pulse Explore Communities Researchers Journals

Home Communities Explore

January 1, 1983IEEE Transactions on Electron Devices

Fabrication and properties of high Jclead—alloy Josephson junctions

Y. Tarutani T. Van Duzer

View at Publisher

Ask AI

Bookmark

Share

Abstract

High-current critical/density lead-alloy tunnel junctions were fabricated with junction areas of less than 1 µm2. The relationship of junction quality, minimum resetting current Im, and energy-gap reduction to current critical/density Jcare investigated experimentally. The Jcdependence of Imis calculated taking into account the experimentally obtained quasi-particle current. The energy-gap reduction in high-Jcjunctions is explained by calculating the nonequilibrium quasi-particle distribution in the junction area. These calculated results are compared with the experimental data.

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Tarutani et al. (1983) studied this question.

synapsesocial.com/papers/6a880d74580ea41f01582ed8 https://doi.org/10.1109/t-ed.1983.21068

View at Publisher

Ask AI

Bookmark

Share

Keep reading

Synapse has enriched 5 related papers. Consider them for comparative context:

1Investigation on the Cumulative Degradation in p-GaN Gate HEMTs Under Synergistic Electrical Stress and Heavy Ion IrradiationIEEE Transactions on Electron Devices · Fri,
2P-Channel GaN FETs on Low-Doped Layers Enabled by Thermal Mg-Diffusion Process: Demonstration and CharacterizationIEEE Transactions on Electron Devices · Tue,
3Modeling Leakage Current Variations Starting From Threshold Voltage Shift in SiC MOSFETs Submitted to Positive Gate StressIEEE Transactions on Electron Devices · Tue,
4Investigation of Gate Field-Plate Effects on f max Improvement in GaN HEMTs for RF ApplicationsIEEE Transactions on Electron Devices · Fri,
5Mechanism Analysis and Small-Signal Modeling of β -Ga 2 O 3 -Based Enhancement-Mode FinFETsIEEE Transactions on Electron Devices · Mon,

More from IEEE Transactions on Electron Devices

Surface Mount Ultra-Thin Millimeter-Wave Bandpass Filter Chip Based on Lithium Niobate With Ultralow Loss and Sharp Roll OffTue,
Rapidly Erasable Ambipolar SnO Charge-Trap Memory With Low Dynamic Energy ConsumptionWed,
Al₂O₃/SiN/AlN/GaN MIS-HEMTs on Silicon for mm-Wave Amplifiers, Switches, and LNAsMon,
Unimodal Multitask Deep Learning for Accurate DC and RF Modeling and Prediction of InP HBTMon,
The Degradation Mechanism of GaN RF HEMTs Under High-Temperature Operation Stress: Effects of High Drain Current and High Drain VoltageThu,