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Review the structural progression and manufacturing processes involved in advancing from planar field-effect transistors (FETs) to vertically integrated complementary field-effect transistors (CFETs).

January 1, 2021Journal of Nano- and Electronic PhysicsOpen Access

Evaluation of Device Fabrication from FET to CFET: A Review

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Review the structural progression and manufacturing processes involved in advancing from planar field-effect transistors (FETs) to vertically integrated complementary field-effect transistors (CFETs).
Literature-based review surveying fabrication methodologies, structural scaling, and process integration for modern transistor architectures.
Traces the architectural evolution from standard FET designs to multi-gate and stacked CFET configurations to overcome physical scaling limits.
Outlines the primary nanofabrication hurdles and integration approaches necessary for sub-nanometer semiconductor technology nodes.

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Implication

Review demonstrates device fabrication pathways from standard field-effect transistors to complementary field-effect transistors, highlighting architecture scaling strategies.

Cite This Study

Prasanna et al. (2021) studied this question.

synapsesocial.com/papers/6a881517b0d802598bf4d548 https://doi.org/10.21272/jnep.13(6).06030

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Implication

Review demonstrates device fabrication pathways from standard field-effect transistors to complementary field-effect transistors, highlighting architecture scaling strategies.

Evaluation of Device Fabrication from FET to CFET: A Review

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Discussion

Implication

Cite This Study

Evaluation of Device Fabrication from FET to CFET: A Review

Key Points

Discussion

Implication

Cite This Study

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