Analysis of Oxygen Evaporation Rate and Dissolution Rate Concerning Czochralski Si Crystal Growth: Effect of Ar Pressure

A small sessile drop sample and a small crucible sample were used for measuring oxygen evaporation rate and dissolution rate. Dependence of the oxygen evaporation rate (from surface of silicon melt) and dissolution rate (from silica glass to silicon melt) on Ar pressure from 20 to 3800 Torr was investigated at different temperatures. The oxygen evaporation rate and dissolution rate increased monotonically with decreasing Ar pressure, and increased remarkably with increasing temperature. The relationship between the oxygen dissolution rate and the interfacial phase of the brownish rings has also been investigated. The interfacial phase disappeared when the oxygen dissolution rate was sufficiently high.