Low-threshold 1.3-μm wavelength, InGaAsP strained-layer multiple quantum well lasers grown by gas source molecular beam epitaxy

We report the growth, by gas source molecular beam epitaxy (GSMBE) of low-threshold 1.3-μm wavelength strained-layer In0.86Ga0.14As0.52P0.48/In0.86Ga0.14 As0.3P0.7 separate confinement heterostructure multiple quantum well lasers. Threshold currents as low as 16 mA were measured for a 390×5-μm ridge laser, and a threshold current density of Jth=490 A/cm2 was achieved for a 1200×5-μm device. Apparently, this is the lowest value of Jth reported to date for 1.3-μm lasers grown by GSMBE, and is comparable to the best devices grown by other techniques such as chemical beam epitaxy and metalorganic vapor phase epitaxy.