Dual-Gate Velocity-Modulated Transistor Based on Black Phosphorus

For the next generation of electronic devices, researchers seek to harness the potential of two-dimensional materials, the most famous being graphene. Unlike graphene, which is a semimetal, black phosphorus is a natural semiconductor with a band gap, requiring no chemical modification or strain. The authors demonstrate voltage control of both carrier mobility and Schottky-barrier resistance in this material at room temperature, the combined effect of which could yield a high-performance velocity-modulated transistor. These results on ``wave function engineering'' of charge-carrier distribution are a necessary starting point for advanced applications.