The magnetic-field effect on electroluminescence (EL) has been investigated for the tris-(8-hydroxyquinolino) aluminum (Alq3)-based organic light emitting diode. The EL intensity sharply increases up to 8% with increasing magnetic field to 500Oe at room temperature. The magnetic field effect on EL depends on the interface structure between a hole transporting and a light emitting layers, indicating the importance of the spin-state dynamics of the electron-hole pairs at the interface.
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Odaka et al. (2006) studied this question.
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