A GaAs PIN travelling-wave modulator operated at 1.3 μm has been fabricated from material grown by organometallic vapour phase epitaxy (OMVPE) on an n+ (100) GaAs substrate. The device has a constant Vπ of 8 V from DC to 10 GHz and an optical extinction ratio of 13 dB. The optical insertion loss of the device is 3.5 dB, and the 3 dB frequency bandwidth is measured to be 4.1 GHz, which is limited by the microwave slowing induced by the n+ substrate.
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Lin et al. (1986) studied this question.
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